FQPF8N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Case Connection :

Isolated

Height :

9.19mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

48W Tc

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Dual Supply Voltage :

600V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Mounting Type :

Through Hole

Length :

10.16mm

Current Rating :

7.5A

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Turn On Delay Time :

16.5 ns

JESD-609 Code :

e3

Rise Time :

60.5ns

Termination :

Through Hole

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

Mount :

Through Hole

Power Dissipation :

48W

Vgs (Max) :

±30V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Series :

QFET®

Fall Time (Typ) :

64.5 ns

Continuous Drain Current (ID) :

7.5A

Threshold Voltage :

4V

Weight :

2.27g

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Turn-Off Delay Time :

81 ns

Additional Feature :

FAST SWITCHING

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Width :

4.7mm

Number of Elements :

1

Number of Terminations :

3