FQPF85N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

230ns

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

4 Weeks

Turn On Delay Time :

40 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Resistance :

10MOhm

Qualification Status :

Not Qualified

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

175 ns

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

10m Ω @ 26.5A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current Rating :

53A

Fall Time (Typ) :

170 ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.16mm

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-220-3 Full Pack

Voltage - Rated DC :

60V

Height :

9.19mm

Number of Terminations :

3

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Power Dissipation-Max :

62W Tc

Weight :

2.27g

Avalanche Energy Rating (Eas) :

820 mJ

Width :

4.7mm

Dual Supply Voltage :

60V

Vgs (Max) :

±25V

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

53A

Case Connection :

Isolated

Pbfree Code :

yes

Power Dissipation :

62W

Input Capacitance (Ciss) (Max) @ Vds :

4120pF @ 25V

Mounting Type :

Through Hole

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA