FQPF7P20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

110ns

Published :

2013

Vgs(th) (Max) @ Id :

5V @ 250μA

Weight :

2.27g

Number of Pins :

3

Drain to Source Voltage (Vdss) :

200V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Radiation Hardening :

No

Length :

10.36mm

Series :

QFET®

Drain to Source Breakdown Voltage :

-200V

Current Rating :

-5.2A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

42 ns

Pulsed Drain Current-Max (IDM) :

20.8A

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.6A, 10V

Voltage - Rated DC :

-200V

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Drain-source On Resistance-Max :

0.69Ohm

Continuous Drain Current (ID) :

5.2A

Mounting Type :

Through Hole

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.9mm

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

560 mJ

Height :

16.07mm

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

45W

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

Factory Lead Time :

4 Weeks

Packaging :

Tube

Power Dissipation-Max :

45W Tc

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V