FQPF7P06
- Mfr.Part #
- FQPF7P06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 5.3A TO220F
- Stock
- 450
- In Stock :
- 450
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Case Connection :
- Isolated
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- MATTE TIN
- Vgs (Max) :
- ±25V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 60V
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Tc
- DS Breakdown Voltage-Min :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 5.3A
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Drain-source On Resistance-Max :
- 0.41Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 24W Tc
- Series :
- QFET®
- Pbfree Code :
- yes
- Packaging :
- Tube
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Pulsed Drain Current-Max (IDM) :
- 21.2A
- Package / Case :
- TO-220-3 Full Pack
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Rds On (Max) @ Id, Vgs :
- 410m Ω @ 2.65A, 10V
- Datasheets
- FQPF7P06

P-Channel Tube 410m Ω @ 2.65A, 10V ±25V 295pF @ 25V 8.2nC @ 10V 60V TO-220-3 Full Pack
FQPF7P06 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 90 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 295pF @ 25V.5.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 21.2A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
FQPF7P06 Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 21.2A.
a 60V drain to source voltage (Vdss)
FQPF7P06 Applications
There are a lot of Rochester Electronics, LLC
FQPF7P06 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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