FQPF7P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

21.2A

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Surface Mount :

No

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

90 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Series :

QFET®

Power Dissipation-Max :

24W Tc

Drain-source On Resistance-Max :

0.41Ohm

Rds On (Max) @ Id, Vgs :

410m Ω @ 2.65A, 10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

5.3A

Case Connection :

Isolated