FQPF7N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

800V

Factory Lead Time :

5 Weeks

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Threshold Voltage :

5V

Turn-Off Delay Time :

50 ns

Rise Time :

100ns

FET Type :

N-Channel

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.3A, 10V

JESD-609 Code :

e3

Pbfree Code :

yes

Fall Time (Typ) :

60 ns

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Power Dissipation :

56W

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Turn On Delay Time :

35 ns

Weight :

2.27g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Width :

4.7mm

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

56W Tc

Continuous Drain Current (ID) :

6.6A

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

26.4A

Terminal Finish :

Tin (Sn)

Height :

9.19mm

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Series :

QFET®

Vgs (Max) :

±30V

Current Rating :

6.6A

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

580 mJ

Length :

10.16mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Pins :

3

Published :

2003

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

800V