FQPF7N65CYDTU
- Mfr.Part #
- FQPF7N65CYDTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A TO220F-3
- Stock
- 20,420
- In Stock :
- 20,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Continuous Drain Current (ID) :
- 7A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1245pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Published :
- 2004
- Power Dissipation-Max :
- 52W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Weight :
- 2.565g
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Turn-Off Delay Time :
- 90 ns
- Rise Time :
- 50ns
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Element Configuration :
- Single
- Fall Time (Typ) :
- 55 ns
- Drain Current-Max (Abs) (ID) :
- 7A
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 650V
- Power Dissipation :
- 52W
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack, Formed Leads
- Turn On Delay Time :
- 20 ns
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Datasheets
- FQPF7N65CYDTU

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack, Formed Leads
FQPF7N65CYDTU Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1245pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.A device can conduct a maximum continuous current of [7A] according to its drain current.It is [90 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQPF7N65CYDTU Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 90 ns
FQPF7N65CYDTU Applications
There are a lot of ON Semiconductor
FQPF7N65CYDTU applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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