FQPF7N65CYDTU

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Mfr.Part #
FQPF7N65CYDTU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack, Formed Leads
Datasheet
Download
Description
MOSFET N-CH 650V 7A TO220F-3
Stock
20,420
In Stock :
20,420

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 3.5A, 10V
Continuous Drain Current (ID) :
7A
Input Capacitance (Ciss) (Max) @ Vds :
1245pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
4 Weeks
JESD-609 Code :
e3
Published :
2004
Power Dissipation-Max :
52W Tc
Operating Temperature :
-55°C~150°C TJ
Series :
QFET®
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Weight :
2.565g
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Turn-Off Delay Time :
90 ns
Rise Time :
50ns
Mounting Type :
Through Hole
Packaging :
Tube
Element Configuration :
Single
Fall Time (Typ) :
55 ns
Drain Current-Max (Abs) (ID) :
7A
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Drain to Source Breakdown Voltage :
650V
Power Dissipation :
52W
Pbfree Code :
yes
Package / Case :
TO-220-3 Full Pack, Formed Leads
Turn On Delay Time :
20 ns
FET Type :
N-Channel
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Datasheets
FQPF7N65CYDTU
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF7N65CYDTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Formed Leads, Number of Pins:3, FQPF7N65CYDTU pinout, FQPF7N65CYDTU datasheet PDF, FQPF7N65CYDTU amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF7N65CYDTU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF7N65CYDTU


N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack, Formed Leads

FQPF7N65CYDTU Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1245pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.A device can conduct a maximum continuous current of [7A] according to its drain current.It is [90 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQPF7N65CYDTU Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 90 ns


FQPF7N65CYDTU Applications


There are a lot of ON Semiconductor
FQPF7N65CYDTU applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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