FQPF7N65C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Width :

4.7mm

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

52W

Threshold Voltage :

4V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mount :

Through Hole

Vgs (Max) :

±30V

Height :

9.19mm

Number of Terminations :

3

Rise Time :

50ns

Voltage - Rated DC :

650V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Additional Feature :

FAST SWITCHING

Pulsed Drain Current-Max (IDM) :

28A

Fall Time (Typ) :

55 ns

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Weight :

2.27g

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

ECCN Code :

EAR99

FET Type :

N-Channel

Published :

2004

Number of Elements :

1

Turn-Off Delay Time :

90 ns

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

52W Tc

Current Rating :

7A

Drain Current-Max (Abs) (ID) :

7A

Mounting Type :

Through Hole

Resistance :

1.4Ohm

Packaging :

Tube

Continuous Drain Current (ID) :

7A

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 3.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

1245pF @ 25V

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Length :

10.16mm

Drain to Source Breakdown Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED