FQPF7N65C
- Mfr.Part #
- FQPF7N65C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 4,012
- In Stock :
- 4,012
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 90 ns
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.7mm
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 7A
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.16mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 52W Tc
- Voltage - Rated DC :
- 650V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Additional Feature :
- FAST SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 9.19mm
- Published :
- 2004
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 7A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1245pF @ 25V
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 7A
- Case Connection :
- Isolated
- Rise Time :
- 50ns
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Weight :
- 2.27g
- Series :
- QFET®
- Fall Time (Typ) :
- 55 ns
- Drain to Source Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 28A
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 52W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Resistance :
- 1.4Ohm
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 20 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FQPF7N65C
FQPF7N65C Documents

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack
FQPF7N65C Description
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
-
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
-
Low gate charge ( Typ. 28nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
In the TO-220-3 package
FQPF7N65C Applications
-
LCD TV
-
LED TV
-
Switched mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
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