FQPF7N65C
- Mfr.Part #
- FQPF7N65C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A TO220F
- Stock
- 4,012
- In Stock :
- 4,012
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Weight :
- 2.27g
- Turn-Off Delay Time :
- 90 ns
- Turn On Delay Time :
- 20 ns
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- 7A
- Pulsed Drain Current-Max (IDM) :
- 28A
- Drain to Source Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 4.7mm
- Rise Time :
- 50ns
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Resistance :
- 1.4Ohm
- Continuous Drain Current (ID) :
- 7A
- Voltage - Rated DC :
- 650V
- Fall Time (Typ) :
- 55 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Length :
- 10.16mm
- Packaging :
- Tube
- Power Dissipation-Max :
- 52W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 9.19mm
- Package / Case :
- TO-220-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- FAST SWITCHING
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1245pF @ 25V
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Published :
- 2004
- Number of Elements :
- 1
- Power Dissipation :
- 52W
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Series :
- QFET®
- Drain Current-Max (Abs) (ID) :
- 7A
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Datasheets
- FQPF7N65C
FQPF7N65C Documents

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack
FQPF7N65C Description
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
-
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
-
Low gate charge ( Typ. 28nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
In the TO-220-3 package
FQPF7N65C Applications
-
LCD TV
-
LED TV
-
Switched mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
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