FQPF7N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

48W

Series :

QFET®

Weight :

2.27g

FET Type :

N-Channel

Turn On Delay Time :

30 ns

Packaging :

Tube

Published :

2013

Rise Time :

80ns

Mount :

Through Hole

Voltage - Rated DC :

600V

Terminal Finish :

Tin (Sn)

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

60 ns

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 25V

Vgs (Max) :

±30V

Number of Pins :

3

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Turn-Off Delay Time :

65 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

4.3A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

580 mJ

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Current Rating :

4.3A

Power Dissipation-Max :

48W Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.2A, 10V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

1Ohm