FQPF7N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

200V

Pin Count :

3

Case Connection :

Isolated

Number of Terminations :

3

Drain-source On Resistance-Max :

0.75Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

73 mJ

JESD-609 Code :

e3

Number of Elements :

1

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

5A

Power Dissipation-Max :

37W Tc

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

750m Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant