FQPF7N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Power Dissipation-Max :

37W Tc

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

19.2A

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.4A, 10V

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

4.8A

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Surface Mount :

No

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

DS Breakdown Voltage-Min :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pin Count :

3

Case Connection :

Isolated

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.69Ohm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

73 mJ