FQPF7N20
- Mfr.Part #
- FQPF7N20
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 4.8A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 4.8A
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Series :
- QFET®
- Pbfree Code :
- yes
- Pin Count :
- 3
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 19.2A
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 690m Ω @ 2.4A, 10V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 37W Tc
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.69Ohm
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 73 mJ
- Datasheets
- FQPF7N20

N-Channel Tube 690m Ω @ 2.4A, 10V ±30V 400pF @ 25V 10nC @ 10V 200V TO-220-3 Full Pack
FQPF7N20 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 73 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 4.8A.Peak drain current is 19.2A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQPF7N20 Features
the avalanche energy rating (Eas) is 73 mJ
based on its rated peak drain current 19.2A.
a 200V drain to source voltage (Vdss)
FQPF7N20 Applications
There are a lot of Rochester Electronics, LLC
FQPF7N20 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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