FQPF7N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.75A, 10V

Number of Terminations :

3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

23W Tc

Series :

QFET®

Drain Current-Max (Abs) (ID) :

5.5A

Terminal Position :

Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

22A

Packaging :

Tube

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

50 mJ

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

No

Additional Feature :

FAST SWITCHING

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.38Ohm

Pin Count :

3

Case Connection :

Isolated

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING