FQPF7N10
- Mfr.Part #
- FQPF7N10
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.5A TO220F
- Stock
- 1,661
- In Stock :
- 1,661
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Series :
- QFET®
- DS Breakdown Voltage-Min :
- 100V
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 25V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 5V
- Qualification Status :
- COMMERCIAL
- Power Dissipation-Max :
- 23W Tc
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 2.75A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain-source On Resistance-Max :
- 0.38Ohm
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Additional Feature :
- FAST SWITCHING
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 5.5A
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3 Full Pack
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 22A
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Packaging :
- Tube
- Datasheets
- FQPF7N10
FQPF7N10 Documents

N-Channel Tube 350m Ω @ 2.75A, 10V ±20V 290pF @ 25V 6nC @ 5V 100V TO-220-3 Full Pack
FQPF7N10L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 290pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 5.5A.Pulsed drain current is maximum rated peak drain current 22A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
FQPF7N10L Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 22A.
a 100V drain to source voltage (Vdss)
FQPF7N10L Applications
There are a lot of Rochester Electronics, LLC
FQPF7N10L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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