FQPF7N10
- Mfr.Part #
- FQPF7N10
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.5A TO220F
- Stock
- 1,661
- In Stock :
- 1,661
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 22A
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3 Full Pack
- DS Breakdown Voltage-Min :
- 100V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Additional Feature :
- FAST SWITCHING
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 2.75A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 5V
- Power Dissipation-Max :
- 23W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 25V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.38Ohm
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Series :
- QFET®
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 5.5A
- FET Type :
- N-Channel
- Datasheets
- FQPF7N10

N-Channel Tube 350m Ω @ 2.75A, 10V ±20V 290pF @ 25V 6nC @ 5V 100V TO-220-3 Full Pack
FQPF7N10L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 290pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 5.5A.Pulsed drain current is maximum rated peak drain current 22A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
FQPF7N10L Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 22A.
a 100V drain to source voltage (Vdss)
FQPF7N10L Applications
There are a lot of Rochester Electronics, LLC
FQPF7N10L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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