FQPF6P25
- Mfr.Part #
- FQPF6P25
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 4.2A TO220F
- Stock
- 4,162
- In Stock :
- 4,162
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 250V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 4.2A
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Tc
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2.1A, 10V
- Avalanche Energy Rating (Eas) :
- 540 mJ
- Power Dissipation-Max :
- 45W Tc
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Series :
- QFET®
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Pulsed Drain Current-Max (IDM) :
- 16.8A
- FET Type :
- P-Channel
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 25V
- DS Breakdown Voltage-Min :
- 250V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Terminal Finish :
- MATTE TIN
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Datasheets
- FQPF6P25

P-Channel Tube 1.1 Ω @ 2.1A, 10V ±30V 780pF @ 25V 27nC @ 10V 250V TO-220-3 Full Pack
FQPF6P25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 540 mJ.A device's maximal input capacitance is 780pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 4.2A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 16.8A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQPF6P25 Features
the avalanche energy rating (Eas) is 540 mJ
based on its rated peak drain current 16.8A.
a 250V drain to source voltage (Vdss)
FQPF6P25 Applications
There are a lot of Rochester Electronics, LLC
FQPF6P25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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