FQPF6P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

4.2A

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Power Dissipation-Max :

45W Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

250V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

16.8A

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

FET Type :

P-Channel

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 2.1A, 10V

Number of Elements :

1

Series :

QFET®

Avalanche Energy Rating (Eas) :

540 mJ

Number of Terminations :

3

Vgs (Max) :

±30V