FQPF6N90CT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Weight :

2.27g

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

900V

Turn-Off Delay Time :

55 ns

Power Dissipation-Max :

56W Tc

Mount :

Through Hole

Fall Time (Typ) :

60 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Number of Pins :

3

Number of Elements :

1

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Continuous Drain Current (ID) :

6A

Power Dissipation :

56W

Rise Time :

90ns

FET Type :

N-Channel