FQPF6N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Length :

10.16mm

Number of Terminations :

3

Width :

4.7mm

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Turn-Off Delay Time :

55 ns

Number of Elements :

1

Power Dissipation :

56W

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 3A, 10V

Transistor Application :

SWITCHING

Height :

9.19mm

Turn On Delay Time :

35 ns

Number of Pins :

3

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Vgs (Max) :

±30V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Published :

2003

Radiation Hardening :

No

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

630 ns

Weight :

2.27g

Drain to Source Breakdown Voltage :

900V

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Rise Time :

90ns

Power Dissipation-Max :

56W Tc

Avalanche Energy Rating (Eas) :

650 mJ

Drain Current-Max (Abs) (ID) :

6A

Fall Time (Typ) :

60 ns

Resistance :

2.3Ohm

Contact Plating :

Tin

Series :

QFET®

Threshold Voltage :

5V

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

24A