FQPF6N80T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Power Dissipation :

51W

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 1.65A, 10V

Turn-Off Delay Time :

65 ns

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

680 mJ

Power Dissipation-Max :

51W Tc

Mounting Type :

Through Hole

Lead Free :

Lead Free

Packaging :

Tube

Factory Lead Time :

7 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

30 ns

Radiation Hardening :

No

Current Rating :

3.3A

Pbfree Code :

yes

JESD-609 Code :

e3

Additional Feature :

UL RECOGNIZED

Weight :

2.27g

Length :

10.36mm

Case Connection :

Isolated

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

3

Transistor Element Material :

SILICON

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

70ns

Voltage - Rated DC :

800V

Height :

16.07mm

Drain to Source Breakdown Voltage :

800V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

45 ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Element Configuration :

Single

FET Type :

N-Channel

Width :

4.9mm

Continuous Drain Current (ID) :

3.3A

Vgs (Max) :

±30V

ECCN Code :

EAR99