FQPF6N80T
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- Mfr.Part #
- FQPF6N80T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3.3A TO220F
- Stock
- 5,142
- In Stock ：
- 5,142
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 680 mJ
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Series :
- QFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- UL RECOGNIZED
- Height :
- 16.07mm
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 3.3A
- Power Dissipation :
- 51W
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Width :
- 4.9mm
- Current Rating :
- 3.3A
- Voltage - Rated DC :
- 800V
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 800V
- Length :
- 10.36mm
- Rise Time :
- 70ns
- Turn-Off Delay Time :
- 65 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Power Dissipation-Max :
- 51W Tc
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Weight :
- 2.27g
- Fall Time (Typ) :
- 45 ns
- Packaging :
- Tube
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Package / Case :
- TO-220-3 Full Pack
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.95 Ω @ 1.65A, 10V
- Datasheets
- FQPF6N80T
N-Channel Tube 1.95 Ω @ 1.65A, 10V ±30V 1500pF @ 25V 31nC @ 10V TO-220-3 Full Pack
FQPF6N80T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 680 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1500pF @ 25V.This device conducts a continuous drain current (ID) of 3.3A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF6N80T Features
the avalanche energy rating (Eas) is 680 mJ
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
FQPF6N80T Applications
There are a lot of ON Semiconductor
FQPF6N80T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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