FQPF6N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

800V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Current Rating :

5.5A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Radiation Hardening :

No

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Power Dissipation :

51W

Mounting Type :

Through Hole

Height :

9.19mm

Resistance :

2.5Ohm

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

680 mJ

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

5.5A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Weight :

2.27g

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 25V

ECCN Code :

EAR99

Pbfree Code :

yes

Length :

10.16mm

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Turn On Delay Time :

26 ns

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Number of Terminations :

3

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Series :

QFET®

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.75A, 10V

Turn-Off Delay Time :

47 ns

Mount :

Through Hole

Fall Time (Typ) :

44 ns

JESD-609 Code :

e3

Vgs (Max) :

±30V

Lead Free :

Lead Free

Width :

4.7mm

Pulsed Drain Current-Max (IDM) :

22A

Published :

2003

Rise Time :

65ns

Power Dissipation-Max :

51W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)