FQPF6N80
- Mfr.Part #
- FQPF6N80
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3.3A TO220F
- Stock
- 1,337
- In Stock :
- 1,337
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Rise Time :
- 65ns
- Power Dissipation :
- 51W
- Threshold Voltage :
- 5V
- JESD-609 Code :
- e3
- Weight :
- 2.27g
- Vgs (Max) :
- ±30V
- Current Rating :
- 5.5A
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 800V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1310pF @ 25V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 2.75A, 10V
- Continuous Drain Current (ID) :
- 5.5A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.16mm
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 51W Tc
- Series :
- QFET®
- Voltage - Rated DC :
- 800V
- Radiation Hardening :
- No
- Factory Lead Time :
- 9 Weeks
- Pulsed Drain Current-Max (IDM) :
- 22A
- Transistor Application :
- SWITCHING
- Height :
- 9.19mm
- Avalanche Energy Rating (Eas) :
- 680 mJ
- Package / Case :
- TO-220-3 Full Pack
- Resistance :
- 2.5Ohm
- Fall Time (Typ) :
- 44 ns
- Mount :
- Through Hole
- Width :
- 4.7mm
- Turn On Delay Time :
- 26 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 47 ns
- Published :
- 2003
- Datasheets
- FQPF6N80

N-Channel Tube 2.5 Ω @ 2.75A, 10V ±30V 1310pF @ 25V 30nC @ 10V TO-220-3 Full Pack
FQPF6N80C Description
These N-channel enhanced mode power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is tailored to minimize on-resistance, provides excellent switching performance and withstands high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching mode power supply.
FQPF6N80C Features
·5.5A800VRDS(on)=2.5Ω@VGs=10V
·Low gate charge(typical 21 nC)
·Low Crss(typical 8pF)
·Fast switching
· 100% avalanche tested
·Improved dv/dt capability
FQPF6N80C Applications
Switching applications
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