FQPF6N60C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

5.5A

Peak Reflow Temperature (Cel) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

22A

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Qualification Status :

COMMERCIAL

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

FAST SWITCHING

Series :

QFET®

Avalanche Energy Rating (Eas) :

300 mJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.75A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Pbfree Code :

yes

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation-Max :

40W Tc

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Drain-source On Resistance-Max :

2Ohm

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA