FQPF6N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Peak Reflow Temperature (Cel) :

Not Applicable

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

14.4A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

44W Tc

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Packaging :

Tube

Avalanche Energy Rating (Eas) :

440 mJ

Terminal Position :

Single

Case Connection :

Isolated

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1pF @ 25V

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

3.6A

Pin Count :

3