FQPF6N60

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Mfr.Part #
FQPF6N60
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 3.6A TO220F
Stock
24,585
In Stock :
24,585

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Series :
QFET®
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
1pF @ 25V
Package / Case :
TO-220-3 Full Pack
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
14.4A
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Voltage (Vdss) :
600V
Power Dissipation-Max :
44W Tc
Peak Reflow Temperature (Cel) :
Not Applicable
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
3.6A
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Terminal Position :
Single
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
440 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
Isolated
Number of Terminations :
3
Pbfree Code :
yes
Terminal Finish :
MATTE TIN
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 1.8A, 10V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Datasheets
FQPF6N60
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF6N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Mounting Type:Through Hole, FQPF6N60 pinout, FQPF6N60 datasheet PDF, FQPF6N60 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF6N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF6N60


N-Channel Tube 1.5 Ω @ 1.8A, 10V ±30V 1pF @ 25V 25nC @ 10V 600V TO-220-3 Full Pack

FQPF6N60 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 440 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 14.4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQPF6N60 Features


the avalanche energy rating (Eas) is 440 mJ
based on its rated peak drain current 14.4A.
a 600V drain to source voltage (Vdss)


FQPF6N60 Applications


There are a lot of Rochester Electronics, LLC
FQPF6N60 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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