FQPF6N40CT

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Mfr.Part #
FQPF6N40CT
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 400V 6A TO220F
Stock
36,469
In Stock :
36,469

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Qualification Status :
COMMERCIAL
Package / Case :
TO-220-3 Full Pack
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
6A
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Surface Mount :
No
Drain to Source Voltage (Vdss) :
400V
Terminal Position :
Single
Terminal Finish :
MATTE TIN
Case Connection :
Isolated
Number of Elements :
1
Reach Compliance Code :
Unknown
Packaging :
Tube
DS Breakdown Voltage-Min :
400V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
1 Ω @ 3A, 10V
Peak Reflow Temperature (Cel) :
Not Applicable
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain-source On Resistance-Max :
1Ohm
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
270 mJ
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Pulsed Drain Current-Max (IDM) :
24A
Series :
QFET®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Power Dissipation-Max :
38W Tc
Datasheets
FQPF6N40CT
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF6N40CT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~150°C TJ, FQPF6N40CT pinout, FQPF6N40CT datasheet PDF, FQPF6N40CT amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF6N40CT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF6N40CT


N-Channel Tube 1 Ω @ 3A, 10V ±30V 625pF @ 25V 20nC @ 10V 400V TO-220-3 Full Pack

FQPF6N40CT Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 270 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 24A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQPF6N40CT Features


the avalanche energy rating (Eas) is 270 mJ
based on its rated peak drain current 24A.
a 400V drain to source voltage (Vdss)


FQPF6N40CT Applications


There are a lot of Rochester Electronics, LLC
FQPF6N40CT applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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