FQPF6N40CT
- Mfr.Part #
- FQPF6N40CT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 6A TO220F
- Stock
- 36,469
- In Stock :
- 36,469
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Unknown
- Qualification Status :
- COMMERCIAL
- Series :
- QFET®
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 3A, 10V
- Drain Current-Max (Abs) (ID) :
- 6A
- Input Capacitance (Ciss) (Max) @ Vds :
- 625pF @ 25V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 1Ohm
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 400V
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 38W Tc
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 24A
- Packaging :
- Tube
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Package / Case :
- TO-220-3 Full Pack
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Datasheets
- FQPF6N40CT
FQPF6N40CT Documents

N-Channel Tube 1 Ω @ 3A, 10V ±30V 625pF @ 25V 20nC @ 10V 400V TO-220-3 Full Pack
FQPF6N40CT Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 270 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 24A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF6N40CT Features
the avalanche energy rating (Eas) is 270 mJ
based on its rated peak drain current 24A.
a 400V drain to source voltage (Vdss)
FQPF6N40CT Applications
There are a lot of Rochester Electronics, LLC
FQPF6N40CT applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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