FQPF6N25

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Mfr.Part #
FQPF6N25
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 250V 4A TO220F
Stock
17,775
In Stock :
17,775

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
Not Applicable
Qualification Status :
COMMERCIAL
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Drain-source On Resistance-Max :
1Ohm
Drain Current-Max (Abs) (ID) :
4A
Package / Case :
TO-220-3 Full Pack
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Power Dissipation-Max :
37W Tc
Drain to Source Voltage (Vdss) :
250V
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Rds On (Max) @ Id, Vgs :
1 Ω @ 2A, 10V
Terminal Finish :
MATTE TIN
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Transistor Application :
SWITCHING
Series :
QFET®
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 250μA
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
75 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Packaging :
Tube
Number of Terminations :
3
Mounting Type :
Through Hole
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
16A
Case Connection :
Isolated
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
DS Breakdown Voltage-Min :
250V
Datasheets
FQPF6N25
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF6N25 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Mounting Type:Through Hole, FQPF6N25 pinout, FQPF6N25 datasheet PDF, FQPF6N25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF6N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF6N25


N-Channel Tube 1 Ω @ 2A, 10V ±30V 300pF @ 25V 8.5nC @ 10V 250V TO-220-3 Full Pack

FQPF6N25 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 75 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 300pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 16A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 250V, it should remain above the 250V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FQPF6N25 Features


the avalanche energy rating (Eas) is 75 mJ
based on its rated peak drain current 16A.
a 250V drain to source voltage (Vdss)


FQPF6N25 Applications


There are a lot of Rochester Electronics, LLC
FQPF6N25 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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