FQPF65N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Published :

2001

Dual Supply Voltage :

60V

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Fall Time (Typ) :

105 ns

Pbfree Code :

yes

Number of Elements :

1

Width :

4.7mm

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

645 mJ

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

16m Ω @ 20A, 10V

Continuous Drain Current (ID) :

40A

Voltage - Rated DC :

60V

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

56W Tc

Vgs (Max) :

±25V

ECCN Code :

EAR99

Weight :

2.27g

Power Dissipation :

56W

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Height :

9.19mm

Lead Free :

Lead Free

Current Rating :

40A

Series :

QFET®

Packaging :

Tube

Turn On Delay Time :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Case Connection :

Isolated

Mounting Type :

Through Hole

Rise Time :

160ns

Turn-Off Delay Time :

90 ns

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 25V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Length :

10.16mm

FET Type :

N-Channel