FQPF5P20
- Mfr.Part #
- FQPF5P20
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 3.4A TO220F
- Stock
- 29,539
- In Stock :
- 29,539
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 25 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Turn On Delay Time :
- 9 ns
- Package / Case :
- TO-220-3 Full Pack
- Turn-Off Delay Time :
- 12 ns
- Length :
- 10.36mm
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Power Dissipation :
- 38W
- Weight :
- 2.27g
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Factory Lead Time :
- 4 Weeks
- Width :
- 4.9mm
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2017
- Height :
- 16.07mm
- Current Rating :
- -3.4A
- Number of Elements :
- 1
- Series :
- QFET®
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 38W Tc
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 3.4A
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Voltage - Rated DC :
- -200V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- -200V
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 1.7A, 10V
- Rise Time :
- 70ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 25V
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 200V
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Datasheets
- FQPF5P20

P-Channel Tube 1.4 Ω @ 1.7A, 10V ±30V 430pF @ 25V 13nC @ 10V 200V TO-220-3 Full Pack
FQPF5P20 Description
FQPF5P20 is a -200v P-Channel QFET? Power MOSFET. This P-Channel enhancement mode power MOSFET FQPF5P20 is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET FQPF5P20 has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQPF5P20 is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQPF5P20 Features
-
-3.4A, -200V, RDS(on) = 1.4Ω(Max.) @VGS = -10 V, ID = -1.7A
-
Low gate charge ( Typ. 10nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
Gate Source Voltage: ±30V
FQPF5P20 Applications
-
Video
-
Audio
-
Switched-mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
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