FQPF5P20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Current Rating :

-3.4A

ECCN Code :

EAR99

Published :

2017

Voltage - Rated DC :

-200V

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

-200V

FET Type :

P-Channel

Weight :

2.27g

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Case Connection :

Isolated

Series :

QFET®

Transistor Element Material :

SILICON

Number of Elements :

1

Lead Free :

Lead Free

Turn-Off Delay Time :

12 ns

Number of Terminations :

3

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Height :

16.07mm

Turn On Delay Time :

9 ns

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

3.4A

Rise Time :

70ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Pbfree Code :

yes

Power Dissipation-Max :

38W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

4.9mm

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

3.4A Tc

Drain to Source Voltage (Vdss) :

200V

Fall Time (Typ) :

25 ns

Power Dissipation :

38W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.7A, 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Length :

10.36mm

Mounting Type :

Through Hole

JESD-609 Code :

e3

Package / Case :

TO-220-3 Full Pack