FQPF5N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

51W Tc

Number of Terminations :

3

Case Connection :

Isolated

Current Rating :

3A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain to Source Breakdown Voltage :

900V

Mount :

Through Hole

Resistance :

2.3Ohm

FET Type :

N-Channel

Lead Free :

Lead Free

Height :

9.19mm

Operating Temperature :

-55°C~150°C TJ

Length :

10.16mm

Series :

QFET®

Turn-Off Delay Time :

65 ns

Width :

4.7mm

Published :

2000

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Voltage - Rated DC :

900V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

65ns

Turn On Delay Time :

28 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 1.5A, 10V

Avalanche Energy Rating (Eas) :

660 mJ

Drain Current-Max (Abs) (ID) :

3A

Fall Time (Typ) :

50 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Weight :

2.27g

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

3A

Power Dissipation :

51W

Number of Pins :

3