FQPF5N80
- Mfr.Part #
- FQPF5N80
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.8A TO220F
- Stock
- 610
- In Stock :
- 610
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- DS Breakdown Voltage-Min :
- 800V
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 47W Tc
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- QFET®
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 800V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.25pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 1.4A, 10V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 590 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 11.2A
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- FQPF5N80

N-Channel Tube 2.6 Ω @ 1.4A, 10V ±30V 1.25pF @ 25V 33nC @ 10V 800V TO-220-3 Full Pack
FQPF5N80 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 590 mJ.A device's maximum input capacitance is 1.25pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 2.8A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 11.2A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 800V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQPF5N80 Features
the avalanche energy rating (Eas) is 590 mJ
based on its rated peak drain current 11.2A.
a 800V drain to source voltage (Vdss)
FQPF5N80 Applications
There are a lot of Rochester Electronics, LLC
FQPF5N80 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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