FQPF5N80

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Mfr.Part #
FQPF5N80
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 2.8A TO220F
Stock
610
In Stock :
610

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Vgs(th) (Max) @ Id :
5V @ 250μA
DS Breakdown Voltage-Min :
800V
Vgs (Max) :
±30V
Power Dissipation-Max :
47W Tc
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
QFET®
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
800V
Packaging :
Tube
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
1.25pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
2.6 Ω @ 1.4A, 10V
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
590 mJ
Current - Continuous Drain (Id) @ 25°C :
2.8A Tc
Drain Current-Max (Abs) (ID) :
2.8A
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
NOT SPECIFIED
Package / Case :
TO-220-3 Full Pack
Number of Elements :
1
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
11.2A
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
FQPF5N80
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF5N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, FQPF5N80 pinout, FQPF5N80 datasheet PDF, FQPF5N80 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF5N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF5N80


N-Channel Tube 2.6 Ω @ 1.4A, 10V ±30V 1.25pF @ 25V 33nC @ 10V 800V TO-220-3 Full Pack

FQPF5N80 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 590 mJ.A device's maximum input capacitance is 1.25pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 2.8A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 11.2A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 800V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

FQPF5N80 Features


the avalanche energy rating (Eas) is 590 mJ
based on its rated peak drain current 11.2A.
a 800V drain to source voltage (Vdss)


FQPF5N80 Applications


There are a lot of Rochester Electronics, LLC
FQPF5N80 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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