FQPF5N60CYDTU
- Mfr.Part #
- FQPF5N60CYDTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.5A TO220F-3
- Stock
- 2,878
- In Stock :
- 2,878
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 2.5Ohm @ 2.25A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Supplier Device Package :
- TO-220F-3 (Y-Forming)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 33W Tc
- Package / Case :
- TO-220-3 Full Pack, Formed Leads
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FQPF5N60CYDTU

N-Channel Tube 2.5Ohm @ 2.25A, 10V ±30V 670pF @ 25V 19nC @ 10V 600V TO-220-3 Full Pack, Formed Leads
FQPF5N60CYDTU Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 670pF @ 25V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQPF5N60CYDTU Features
a 600V drain to source voltage (Vdss)
FQPF5N60CYDTU Applications
There are a lot of Rochester Electronics, LLC
FQPF5N60CYDTU applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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