FQPF5N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Fall Time (Typ) :

46 ns

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Power Dissipation :

33W

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Height :

9.19mm

Element Configuration :

Single

Weight :

2.27g

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.16mm

Rise Time :

42ns

Width :

4.7mm

Radiation Hardening :

No

Power Dissipation-Max :

33W Tc

Mounting Type :

Through Hole

Number of Pins :

3

Pbfree Code :

yes

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Lead Free :

Lead Free

Threshold Voltage :

4V

Number of Elements :

1

Voltage - Rated DC :

600V

Mount :

Through Hole

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Published :

2013

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

4.5A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Current Rating :

4.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

FET Type :

N-Channel

Turn-Off Delay Time :

38 ns

Factory Lead Time :

4 Weeks