FQPF5N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Power Dissipation :

33W

Number of Elements :

1

Published :

2013

Number of Pins :

3

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Turn-Off Delay Time :

38 ns

Transistor Element Material :

SILICON

Mount :

Through Hole

Radiation Hardening :

No

Weight :

2.27g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Length :

10.16mm

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Power Dissipation-Max :

33W Tc

Operating Mode :

ENHANCEMENT MODE

Width :

4.7mm

Pbfree Code :

yes

Number of Terminations :

3

Element Configuration :

Single

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3 Full Pack

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Continuous Drain Current (ID) :

4.5A

Lead Free :

Lead Free

Rise Time :

42ns

Height :

9.19mm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Series :

QFET®

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Case Connection :

Isolated

Current Rating :

4.5A

Fall Time (Typ) :

46 ns