FQPF5N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

40W Tc

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

2.8A

Peak Reflow Temperature (Cel) :

Not Applicable

Drain-source On Resistance-Max :

2Ohm

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Pbfree Code :

yes

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

300 mJ

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.4A, 10V

Pulsed Drain Current-Max (IDM) :

11.2A

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc