FQPF5N60

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Mfr.Part #
FQPF5N60
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 2.8A TO220F
Stock
5,923
In Stock :
5,923

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Series :
QFET®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
Drain to Source Voltage (Vdss) :
600V
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
JESD-609 Code :
e3
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Mounting Type :
Through Hole
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3 Full Pack
Pin Count :
3
Drain Current-Max (Abs) (ID) :
2.8A
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
COMMERCIAL
Current - Continuous Drain (Id) @ 25°C :
2.8A Tc
Pbfree Code :
yes
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Terminal Finish :
MATTE TIN
Packaging :
Tube
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
600V
Peak Reflow Temperature (Cel) :
Not Applicable
JEDEC-95 Code :
TO-220AB
Avalanche Energy Rating (Eas) :
300 mJ
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
2 Ω @ 1.4A, 10V
Pulsed Drain Current-Max (IDM) :
11.2A
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
730pF @ 25V
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
2Ohm
Power Dissipation-Max :
40W Tc
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Datasheets
FQPF5N60
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF5N60 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FQPF5N60 pinout, FQPF5N60 datasheet PDF, FQPF5N60 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF5N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF5N60


N-Channel Tube 2 Ω @ 1.4A, 10V ±30V 730pF @ 25V 20nC @ 10V 600V TO-220-3 Full Pack

FQPF5N60 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 730pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 2.8A.There is a peak drain current of 11.2A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FQPF5N60 Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 11.2A.
a 600V drain to source voltage (Vdss)


FQPF5N60 Applications


There are a lot of Rochester Electronics, LLC
FQPF5N60 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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