FQPF5N50CYDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Rise Time :

46ns

Package / Case :

TO-220-3 Full Pack, Formed Leads

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Fall Time (Typ) :

48 ns

Pulsed Drain Current-Max (IDM) :

20A

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation-Max :

38W Tc

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Height :

15.87mm

FET Type :

N-Channel

Number of Terminations :

3

Continuous Drain Current (ID) :

5A

Mount :

Through Hole

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

12 ns

Length :

10.16mm

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Packaging :

Tube

Series :

QFET®

Published :

2003

Lead Free :

Lead Free

Width :

4.7mm

Turn-Off Delay Time :

50 ns

Drain Current-Max (Abs) (ID) :

5A

Weight :

2.565g

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Element Configuration :

Single

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Voltage - Rated DC :

500V

Current Rating :

5A

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Case Connection :

Isolated

Power Dissipation :

38W