FQPF5N50CT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Radiation Hardening :

No

Weight :

2.27g

Fall Time (Typ) :

48 ns

FET Type :

N-Channel

Vgs (Max) :

±30V

Power Dissipation-Max :

38W Tc

Voltage - Rated DC :

500V

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Series :

QFET®

Number of Elements :

1

Number of Pins :

3

Packaging :

Tube

Power Dissipation :

38W

Turn On Delay Time :

12 ns

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Turn-Off Delay Time :

50 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

5A

Rise Time :

46ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Current Rating :

5A