FQPF5N50CFTU
- Mfr.Part #
- FQPF5N50CFTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 38W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- TO-220-3 Full Pack
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements :
- 1
- Terminal Finish :
- MATTE TIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 625pF @ 25V
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 500V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Series :
- FRFET®
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Case Connection :
- Isolated
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Additional Feature :
- FAST SWITCHING
- Drain Current-Max (Abs) (ID) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.55 Ω @ 2.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 20A
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Transistor Application :
- SWITCHING
- Datasheets
- FQPF5N50CFTU
FQPF5N50CFTU Documents

N-Channel Tube 1.55 Ω @ 2.5A, 10V ±30V 625pF @ 25V 24nC @ 10V 500V TO-220-3 Full Pack
FQPF5N50CFTU Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 625pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQPF5N50CFTU Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 20A.
a 500V drain to source voltage (Vdss)
FQPF5N50CFTU Applications
There are a lot of Rochester Electronics, LLC
FQPF5N50CFTU applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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