FQPF5N50

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Mfr.Part #
FQPF5N50
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 3A TO220F
Stock
9,204
In Stock :
9,204

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Pbfree Code :
yes
Case Connection :
Isolated
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Series :
QFET®
Peak Reflow Temperature (Cel) :
Not Applicable
Drain Current-Max (Abs) (ID) :
3A
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
39W Tc
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Avalanche Energy Rating (Eas) :
300 mJ
Reach Compliance Code :
Unknown
Qualification Status :
COMMERCIAL
Terminal Position :
Single
Terminal Finish :
MATTE TIN
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Surface Mount :
No
DS Breakdown Voltage-Min :
500V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
610pF @ 25V
Rds On (Max) @ Id, Vgs :
1.8 Ω @ 1.5A, 10V
Drain to Source Voltage (Vdss) :
500V
JESD-609 Code :
e3
Package / Case :
TO-220-3 Full Pack
Vgs(th) (Max) @ Id :
5V @ 250μA
Pulsed Drain Current-Max (IDM) :
12A
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
FQPF5N50
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF5N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, FQPF5N50 pinout, FQPF5N50 datasheet PDF, FQPF5N50 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF5N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF5N50


N-Channel Tube 1.8 Ω @ 1.5A, 10V ±30V 610pF @ 25V 17nC @ 10V 500V TO-220-3 Full Pack

FQPF5N50 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 12A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FQPF5N50 Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 12A.
a 500V drain to source voltage (Vdss)


FQPF5N50 Applications


There are a lot of Rochester Electronics, LLC
FQPF5N50 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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