FQPF5N50
- Mfr.Part #
- FQPF5N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A TO220F
- Stock
- 9,204
- In Stock :
- 9,204
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On (Max) @ Id, Vgs :
- 1.8 Ω @ 1.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Series :
- QFET®
- Terminal Position :
- Single
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 12A
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- DS Breakdown Voltage-Min :
- 500V
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 3A
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Surface Mount :
- No
- Power Dissipation-Max :
- 39W Tc
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Datasheets
- FQPF5N50

N-Channel Tube 1.8 Ω @ 1.5A, 10V ±30V 610pF @ 25V 17nC @ 10V 500V TO-220-3 Full Pack
FQPF5N50 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 12A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQPF5N50 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 12A.
a 500V drain to source voltage (Vdss)
FQPF5N50 Applications
There are a lot of Rochester Electronics, LLC
FQPF5N50 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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