FQPF5N20L
- Mfr.Part #
- FQPF5N20L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.5A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 1.75A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- MATTE TIN
- Pulsed Drain Current-Max (IDM) :
- 14A
- Transistor Application :
- SWITCHING
- Series :
- QFET®
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 3.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 200V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Pin Count :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 5V
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 32W Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Datasheets
- FQPF5N20L
FQPF5N20L Documents

N-Channel Tube 1.2 Ω @ 1.75A, 10V ±20V 325pF @ 25V 6.2nC @ 5V 200V TO-220-3 Full Pack
FQPF5N20L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 325pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 3.5A.There is a peak drain current of 14A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
FQPF5N20L Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 14A.
a 200V drain to source voltage (Vdss)
FQPF5N20L Applications
There are a lot of Rochester Electronics, LLC
FQPF5N20L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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