FQPF5N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.1A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

150V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

16.8A

Operating Temperature :

-55°C~175°C TJ

Case Connection :

Isolated

Packaging :

Tube

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

JESD-609 Code :

e3

Power Dissipation-Max :

32W Tc

Drain Current-Max (Abs) (ID) :

4.2A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

55 mJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Vgs (Max) :

±25V

Drain-source On Resistance-Max :

0.8Ohm

Pbfree Code :

yes

DS Breakdown Voltage-Min :

150V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Mounting Type :

Through Hole

Terminal Position :

Single

Transistor Application :

SWITCHING