FQPF50N06
- Mfr.Part #
- FQPF50N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 31A TO220F
- Stock
- 1,793
- In Stock :
- 1,793
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 60V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 22mOhm
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 15.5A, 10V
- Turn On Delay Time :
- 15 ns
- Mounting Type :
- Through Hole
- Weight :
- 2.27g
- Current Rating :
- 31A
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs (Max) :
- ±25V
- Height :
- 9.19mm
- Power Dissipation-Max :
- 47W Tc
- Continuous Drain Current (ID) :
- 31A
- Dual Supply Voltage :
- 60V
- Package / Case :
- TO-220-3 Full Pack
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Width :
- 4.7mm
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 60 ns
- Number of Elements :
- 1
- Rise Time :
- 105ns
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1540pF @ 25V
- Series :
- QFET®
- Published :
- 2001
- Threshold Voltage :
- 4V
- Power Dissipation :
- 47W
- Fall Time (Typ) :
- 65 ns
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Packaging :
- Tube
- Length :
- 10.16mm
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Datasheets
- FQPF50N06

N-Channel Tube 22m Ω @ 15.5A, 10V ±25V 1540pF @ 25V 41nC @ 10V TO-220-3 Full Pack
FQPF50N06 Description
The planar stripe, DMOS technology developed by Fairchild is used to create these N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for low voltage uses including automotive, DC/DC converters, and high efficiency switching for power management in mobile and battery-powered products.
FQPF50N06 Features
?31A, 60V, @VGS = 10 V, RDS(on) = 0.022
? Minimal gate fee ( typical 31 nC)
Low Crash ( typical 65 pF)
? Quick switch
? Complete avalanche testing
? Better dv/dt capabilities
? Maximum junction temperature rating of 175 °C.
FQPF50N06 Applications
Switching applications
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