FQPF50N06

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Mfr.Part #
FQPF50N06
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 60V 31A TO220F
Stock
1,793
In Stock :
1,793

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
60V
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
22mOhm
Nominal Vgs :
4 V
Rds On (Max) @ Id, Vgs :
22m Ω @ 15.5A, 10V
Turn On Delay Time :
15 ns
Mounting Type :
Through Hole
Weight :
2.27g
Current Rating :
31A
Gate to Source Voltage (Vgs) :
25V
Vgs (Max) :
±25V
Height :
9.19mm
Power Dissipation-Max :
47W Tc
Continuous Drain Current (ID) :
31A
Dual Supply Voltage :
60V
Package / Case :
TO-220-3 Full Pack
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Number of Pins :
3
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
31A Tc
Width :
4.7mm
Pbfree Code :
yes
Turn-Off Delay Time :
60 ns
Number of Elements :
1
Rise Time :
105ns
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1540pF @ 25V
Series :
QFET®
Published :
2001
Threshold Voltage :
4V
Power Dissipation :
47W
Fall Time (Typ) :
65 ns
Drain to Source Breakdown Voltage :
60V
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Packaging :
Tube
Length :
10.16mm
Mount :
Through Hole
REACH SVHC :
No SVHC
Datasheets
FQPF50N06
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF50N06 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, FQPF50N06 pinout, FQPF50N06 datasheet PDF, FQPF50N06 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF50N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF50N06


N-Channel Tube 22m Ω @ 15.5A, 10V ±25V 1540pF @ 25V 41nC @ 10V TO-220-3 Full Pack

FQPF50N06 Description


The planar stripe, DMOS technology developed by Fairchild is used to create these N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for low voltage uses including automotive, DC/DC converters, and high efficiency switching for power management in mobile and battery-powered products.



FQPF50N06 Features


?31A, 60V, @VGS = 10 V, RDS(on) = 0.022


? Minimal gate fee ( typical 31 nC)


Low Crash ( typical 65 pF)


? Quick switch


? Complete avalanche testing


? Better dv/dt capabilities


? Maximum junction temperature rating of 175 °C.



FQPF50N06 Applications


Switching applications


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