FQPF4N90CT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 25V

Vgs (Max) :

±30V

Number of Pins :

3

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drain Current-Max (Abs) (ID) :

4A

Packaging :

Tube

Pbfree Code :

yes

Fall Time (Typ) :

35 ns

Weight :

2.27g

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

47W Tc

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

50ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 2A, 10V

FET Type :

N-Channel

Power Dissipation :

47W

Lead Free :

Lead Free

Series :

QFET®

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

25 ns

Continuous Drain Current (ID) :

4A

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V