FQPF4N90CT
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- Mfr.Part #
- FQPF4N90CT
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 4A TO220F
- Stock
- 9,047
- In Stock ：
- 9,047
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Factory Lead Time :
- 4 Weeks
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 35 ns
- Drain Current-Max (Abs) (ID) :
- 4A
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 25V
- Packaging :
- Tube
- Rise Time :
- 50ns
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 25 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3 Full Pack
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 4.2 Ω @ 2A, 10V
- Continuous Drain Current (ID) :
- 4A
- Turn-Off Delay Time :
- 40 ns
- JESD-609 Code :
- e3
- Series :
- QFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Weight :
- 2.27g
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Power Dissipation :
- 47W
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power Dissipation-Max :
- 47W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 900V
- Pbfree Code :
- yes
- Datasheets
- FQPF4N90CT
N-Channel Tube 4.2 Ω @ 2A, 10V ±30V 960pF @ 25V 22nC @ 10V 900V TO-220-3 Full Pack
FQPF4N90CT Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 960pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQPF4N90CT Features
a continuous drain current (ID) of 4A
the turn-off delay time is 40 ns
a 900V drain to source voltage (Vdss)
FQPF4N90CT Applications
There are a lot of ON Semiconductor
FQPF4N90CT applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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