FQPF4N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

570 mJ

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Turn-Off Delay Time :

40 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

900V

Packaging :

Tube

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±30V

Threshold Voltage :

5V

Height :

9.19mm

Factory Lead Time :

4 Weeks

Power Dissipation :

47W

Length :

10.16mm

Series :

QFET®

JEDEC-95 Code :

TO-220AB

Weight :

2.27g

Case Connection :

Isolated

Contact Plating :

Tin

Current Rating :

4A

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 2A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 25V

Number of Terminations :

3

Voltage - Rated DC :

900V

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.7mm

Published :

2003

Mounting Type :

Through Hole

Element Configuration :

Single

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

4A Tc

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Power Dissipation-Max :

47W Tc

Fall Time (Typ) :

35 ns

Continuous Drain Current (ID) :

4A

Drain Current-Max (Abs) (ID) :

4A

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Rise Time :

50ns