FQPF4N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

10.4A

Avalanche Energy Rating (Eas) :

260 mJ

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Power Dissipation-Max :

36W Tc

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

FET Type :

N-Channel

Packaging :

Tube

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.3A, 10V

JESD-609 Code :

e3

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2.6A

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON