FQPF4N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

36W Tc

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

Pin Count :

3

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.3A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Avalanche Energy Rating (Eas) :

260 mJ

Terminal Finish :

MATTE TIN

Vgs (Max) :

±30V

FET Type :

N-Channel

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

10.4A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Qualification Status :

COMMERCIAL

Package / Case :

TO-220-3 Full Pack

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

JESD-609 Code :

e3

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

2.6A

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc